ELECTROOPTIC APPARATUS AND ELECTRONIC APPARATUS

PROBLEM TO BE SOLVED: To restrain a light leak current by improving light shielding performance in an electrooptic apparatus such as a liquid crystal display device.SOLUTION: The electrooptic apparatus includes: a transistor (30) having a semiconductor layer (1a) and a gate electrode (31) on a subst...

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Bibliographische Detailangaben
1. Verfasser:	EGAMI TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To restrain a light leak current by improving light shielding performance in an electrooptic apparatus such as a liquid crystal display device.SOLUTION: The electrooptic apparatus includes: a transistor (30) having a semiconductor layer (1a) and a gate electrode (31) on a substrate (10); a colored insulating film (14) formed on the upper layer side of the transistor; and a lower light shielding film (11) formed on the lower layer side of the transistor through an interlayer dielectric (12). The gate electrode is formed along the inner wall of a contact hole (810) bored at the side of a part overlapping the semiconductor layer in the interlayer dielectric, so that it is electrically connected to the lower light shielding film. The colored insulating film is formed along the surface of a part formed along the inner wall of the contact hole in the gate electrode.