β-KETOIMINE COMPOUND, METAL COMPLEX AND RAW MATERIAL FOR FORMING THIN FILM
PROBLEM TO BE SOLVED: To provide a metal complex having properties suitable for precursors of CVD method and ALD method, especially, excellent melting point, heat resistance and solubility in organic solvents.SOLUTION: The metal complex of a β-ketoimine compound represented by formula (1) (wherein R...
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| creator | SAKURAI ATSUSHI RI CHINZUI KAMIYAMA JUNJI SHIMIZU MASAKO WADA SENJI SATO HARUYOSHI CHO YOUN-JOUNG YOSHINAKA ATSUYA YOSHINO TOMOHARU CHOI JUNG-SIK LEE TEIKO |
| description | PROBLEM TO BE SOLVED: To provide a metal complex having properties suitable for precursors of CVD method and ALD method, especially, excellent melting point, heat resistance and solubility in organic solvents.SOLUTION: The metal complex of a β-ketoimine compound represented by formula (1) (wherein Rand Rare each methyl or ethyl), preferably a metal complex in which a metal atom in the metal complex represented by formula (1) is a metal element of the group 2, especially strontium and the valence of the metal atom is 2, is provided. |
| format | Patent |
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| subjects | ACYCLIC OR CARBOCYCLIC COMPOUNDS ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | β-KETOIMINE COMPOUND, METAL COMPLEX AND RAW MATERIAL FOR FORMING THIN FILM |
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