β-KETOIMINE COMPOUND, METAL COMPLEX AND RAW MATERIAL FOR FORMING THIN FILM

β-KETOIMINE COMPOUND, METAL COMPLEX AND RAW MATERIAL FOR FORMING THIN FILM

PROBLEM TO BE SOLVED: To provide a metal complex having properties suitable for precursors of CVD method and ALD method, especially, excellent melting point, heat resistance and solubility in organic solvents.SOLUTION: The metal complex of a β-ketoimine compound represented by formula (1) (wherein R...

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Hauptverfasser: SAKURAI ATSUSHI, RI CHINZUI, KAMIYAMA JUNJI, SHIMIZU MASAKO, WADA SENJI, SATO HARUYOSHI, CHO YOUN-JOUNG, YOSHINAKA ATSUYA, YOSHINO TOMOHARU, CHOI JUNG-SIK, LEE TEIKO
Format: Patent
Sprache:eng
Schlagworte:
ACYCLIC OR CARBOCYCLIC COMPOUNDS
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
ORGANIC CHEMISTRY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a metal complex having properties suitable for precursors of CVD method and ALD method, especially, excellent melting point, heat resistance and solubility in organic solvents.SOLUTION: The metal complex of a β-ketoimine compound represented by formula (1) (wherein Rand Rare each methyl or ethyl), preferably a metal complex in which a metal atom in the metal complex represented by formula (1) is a metal element of the group 2, especially strontium and the valence of the metal atom is 2, is provided.