PROCESS AND APPARATUS FOR PRODUCING GALLIUM OXIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide an apparatus and a process for producing a gallium oxide single crystal by which the reproducibility of the gallium oxide single crystal is secured. SOLUTION: The apparatus 1 for producing the gallium oxide single crystal includes control part 50. The control part 50...

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Hauptverfasser:	NISHIGUCHI KENGO, AIDA HIDEO, KOYAMA KOJI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an apparatus and a process for producing a gallium oxide single crystal by which the reproducibility of the gallium oxide single crystal is secured. SOLUTION: The apparatus 1 for producing the gallium oxide single crystal includes control part 50. The control part 50 determines a desired weight of the gallium oxide single crystal. The control part 50 also calculates the amount of evaporation of the raw material containing gallium oxide during the production process of the gallium oxide single crystal having the determined weight. The control part 50 calculates the weight of the gallium oxide raw material necessary for producing the desired weight of the gallium single crystal, on the basis of the determined weight of the gallium single crystal and the calculated amount of evaporation of the raw material for gallium oxide. COPYRIGHT: (C)2011,JPO&INPIT