NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a nitride semiconductor ultraviolet light-emitting element that suppresses a degradation in light emission efficiency by relaxing an internal electric field generated in an active layer without depending upon In composition modulation effect. SOLUTION: At least an n-type clad layer 6 made of an n-type AlGaN-based semiconductor, the active layer 7 of an AlGaN-based semiconductor having a quantum well structure of one or more layers, and a p-type clad layer 9 made of a p-type AlGaN-base semiconductor are arranged in order on a surface of a substrate or on a template 5 formed of one or more AlGaN-based semiconductor layers formed on a surface of a substrate, and composition modulation is applied to an Al composition ratio at least in one well layer 7b of the active layer 7 so as to decrease band gap energy from the side of the p-type clad layer 9 toward the n-type clad layer 6. COPYRIGHT: (C)2011,JPO&INPIT