APPARATUS FOR GROWING CRYSTAL

PROBLEM TO BE SOLVED: To provide an apparatus for growing a crystal in which a large and high-quality crystal is obtained by stirring a melt while maintaining uniform temperature distribution in a heat-insulating vessel. SOLUTION: An apparatus 1 for producing gallium nitride includes a reaction vess...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: IIJIMA SHIGEKI, FUKUCHI YASUHIKO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide an apparatus for growing a crystal in which a large and high-quality crystal is obtained by stirring a melt while maintaining uniform temperature distribution in a heat-insulating vessel. SOLUTION: An apparatus 1 for producing gallium nitride includes a reaction vessel 10, a heat-insulating vessel 20 enclosing the outside of the reaction vessel 10, a pressure vessel 30 enclosing the outside of the heat-insulating vessel 20, and a stirring device 40 for stirring a mixture melt 3 by rotating a drive shaft 41 around the axis, which is provided as penetrating the heat-insulating vessel 20 and the pressure vessel 30. The apparatus also includes a shaft casing 42 having a housing space S1 for housing one end of the drive shaft 41 in an air-tight manner, and a bellows tube 53 enclosing the drive shaft 41 that can freely stretch and shrink in the axial direction between the heat-insulating vessel 20 and the pressure vessel 30, and forming an air-tight space connecting the housing space S1 and a first hole 22 formed in the heat-insulating vessel 20 where the other end of the drive shaft 41 penetrates. COPYRIGHT: (C)2011,JPO&INPIT