DEFECT REPAIR APPARATUS, AND METHOD FOR EUV MASK

PROBLEM TO BE SOLVED: To repair defects of an EUV mask without markedly deteriorating reflectance of a reflection layer in the EUV mask. SOLUTION: A defect repair apparatus for an EUV mask includes: an electric field ionization type ion source that generates a hydrogen ion beam; an ion optical syste...

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Hauptverfasser: OGAWA TAKASHI, YASAKA KOJIN, OBA HIROSHI, ARAMAKI BUNRO
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creator OGAWA TAKASHI
YASAKA KOJIN
OBA HIROSHI
ARAMAKI BUNRO
description PROBLEM TO BE SOLVED: To repair defects of an EUV mask without markedly deteriorating reflectance of a reflection layer in the EUV mask. SOLUTION: A defect repair apparatus for an EUV mask includes: an electric field ionization type ion source that generates a hydrogen ion beam; an ion optical system that scans and irradiates the EUV mask by focusing the hydrogen ion beam onto the EUV mask; a sample stage on which the EUV mask is placed; a detector that detects secondary charged particles generated from the EUV mask; and an image forming unit that forms an observation image of the EUV mask on the basis of an output signal from the detector. COPYRIGHT: (C)2011,JPO&INPIT
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
title DEFECT REPAIR APPARATUS, AND METHOD FOR EUV MASK
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