DEFECT REPAIR APPARATUS, AND METHOD FOR EUV MASK

PROBLEM TO BE SOLVED: To repair defects of an EUV mask without markedly deteriorating reflectance of a reflection layer in the EUV mask. SOLUTION: A defect repair apparatus for an EUV mask includes: an electric field ionization type ion source that generates a hydrogen ion beam; an ion optical syste...

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Bibliographische Detailangaben
Hauptverfasser:	OGAWA TAKASHI, YASAKA KOJIN, OBA HIROSHI, ARAMAKI BUNRO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To repair defects of an EUV mask without markedly deteriorating reflectance of a reflection layer in the EUV mask. SOLUTION: A defect repair apparatus for an EUV mask includes: an electric field ionization type ion source that generates a hydrogen ion beam; an ion optical system that scans and irradiates the EUV mask by focusing the hydrogen ion beam onto the EUV mask; a sample stage on which the EUV mask is placed; a detector that detects secondary charged particles generated from the EUV mask; and an image forming unit that forms an observation image of the EUV mask on the basis of an output signal from the detector. COPYRIGHT: (C)2011,JPO&INPIT