SPUTTERING TARGET

PROBLEM TO BE SOLVED: To provide a sputtering target which allows to stably form a film and hardly causes cracks or arcing. SOLUTION: The sputtering target comprises a zinc oxide sintered body having a relative density of ≤99%, wherein a lightness difference ΔL* within the plane of the major face 11...

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Bibliographische Detailangaben
Hauptverfasser:	ISHIDA HIRONORI, SHIMOJIMA HIROMASA, MIYATA NOBORU, IGUCHI MASAHITO, FUKAZAWA KENICHI
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a sputtering target which allows to stably form a film and hardly causes cracks or arcing. SOLUTION: The sputtering target comprises a zinc oxide sintered body having a relative density of ≤99%, wherein a lightness difference ΔL* within the plane of the major face 11a to be exposed to a sputtering atmosphere is ≤5. The target has an average particle diameter of ≤15 μm, and the maximum height Rz of the major face 11a is not more than a half of the average particle diameter. The target comprises a zinc oxide sintered body prepared by sintering a CIP compact which is shaped by removing a portion at least 10 mm inside the couture of the green compact as a green machining margin. COPYRIGHT: (C)2011,JPO&INPIT