METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of restraining or preventing occurrence of variation in a device characteristic of an insulation gate type field effect transistor and breakage of a gate insulation film thereof. SOLUTION: In this method of man...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	FURUHIRA TAKAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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