METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of restraining or preventing occurrence of variation in a device characteristic of an insulation gate type field effect transistor and breakage of a gate insulation film thereof. SOLUTION: In this method of manufacturing a semiconductor device, a substrate formed with a semiconductor layer on an insulation layer is prepared; argon ions are implanted into the surface of the semiconductor layer; a gate insulation film is formed on the semiconductor layer after the argon ion implantation; a gate electrode is formed on the gate insulation film; and a source region and a drain region are formed in the semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT