SUBSTRATE PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide a substrate processing method reducing variations in line widths of first and second resist patterns between substrates and in a substrate surface when forming minute resist patterns by double patterning. SOLUTION: The substrate processing method includes: first processing processes S13-S16 of exposing a substrate formed with a first resist film and forming a first resist pattern by a heating process and a development process; and second processing processes S17-S20 of forming a second resist film on the substrate formed with the first resist pattern, exposing the substrate formed with the second resist film, and forming a second resist pattern by the heating process and development process. A first processing condition of first processing processes S22-S25 is corrected based on a measurement value of the line width of the second resist pattern formed on one substrate, and a second processing condition of second processing processes S26-S29 is corrected based on a measurement value of the line width of the first resist pattern formed on one substrate. COPYRIGHT: (C)2011,JPO&INPIT