SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device reducing leakage current of a three-dimensionally formed transistor or a thyristor, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes: silicon pillars 12 formed nearly vertically in relation to the p...

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1. Verfasser: KUJIRAI YUTAKA
Format: Patent
Sprache:eng
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