SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device reducing leakage current of a three-dimensionally formed transistor or a thyristor, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes: silicon pillars 12 formed nearly vertically in relation to the principal surface of a substrate 10; first and second impurity diffusion layers 14, 16 formed on the lower part and the upper part of the silicon pillar 12, respectively; gate electrodes 18 formed horizontally penetrating the silicon pillars 12; gate insulating films 20 formed between the gate electrodes 18 and the silicon pillars 12; back gate electrodes 48 formed adjacent to the silicon pillars 12; and back gate insulating films 46 formed between the back gate electrodes 48 and the silicon pillars 12. COPYRIGHT: (C)2011,JPO&INPIT