CLEANING AGENT FOR SEMICONDUCTOR PROVIDED WITH TUNGSTEN WIRING

PROBLEM TO BE SOLVED: To provide a cleaning agent for a semiconductor provided with tungsten and tungsten alloy wiring which is excellent in removal of an abrasive particle residue derived from an abrasive and removal of a metal residue on an insulating film and also excellent in tungsten corrosion...

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Bibliographische Detailangaben
Hauptverfasser:	KOMICHI YUKICHI, NAKANISHI MUTSUMI
Format:	Patent
Sprache:	eng
Schlagworte:	ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM METALLURGY RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a cleaning agent for a semiconductor provided with tungsten and tungsten alloy wiring which is excellent in removal of an abrasive particle residue derived from an abrasive and removal of a metal residue on an insulating film and also excellent in tungsten corrosion inhibition in tungsten wiring. SOLUTION: The cleaning agent for a semiconductor provided with tungsten and tungsten alloy wiring contains organic amine (A), quaternary ammonium hydroxide (B), a chelating agent (C), and water (W) as essential ingredients, and its pH is 7.0-14.0. COPYRIGHT: (C)2011,JPO&INPIT