VACUUM PROCESSING DEVICE, AND METHOD OF PROCESSING PARAMETER IN PLC

PROBLEM TO BE SOLVED: To provide a film-forming device capable of executing a process parameter of a data volume exceeding a finite memory volume, in the finite memory volume of a PLC, without degrading the throughput. SOLUTION: A PLC system for controlling the film-forming device is constituted to...

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Bibliographische Detailangaben
1. Verfasser:	KANEKO SHIGEO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FUNCTIONAL ELEMENTS OF SUCH SYSTEMS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS PHYSICS REGULATING SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a film-forming device capable of executing a process parameter of a data volume exceeding a finite memory volume, in the finite memory volume of a PLC, without degrading the throughput. SOLUTION: A PLC system for controlling the film-forming device is constituted to include an operation computer for preparing a process recipe, and for storing the prepared process recipe; a next layer region P3, transferred sequentially with the process parameter processed in the next from the process recipe stored in the operation computer; a layer region P2 transferred sequentially with the process parameter stored in the next layer region P3; and a step execution area P1 read in sequentially with a command processed next, from among the process parameters stored in the layer region P2, and the commands stored in the step execution region P1 are sequentially executed a film is formed. COPYRIGHT: (C)2011,JPO&INPIT