CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad capable of making compatible both the improvement of the flatness of a surface to be polished and the reduction of a polishing defect (scratch) in CMP, and a chemical mechanical polishing method using the pad. SOLUTION: The chemica...

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Bibliographische Detailangaben
Hauptverfasser:	YOKOI KATSUTAKA, MAEKAWA AYAKO, SHIDA HIROTAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad capable of making compatible both the improvement of the flatness of a surface to be polished and the reduction of a polishing defect (scratch) in CMP, and a chemical mechanical polishing method using the pad. SOLUTION: The chemical mechanical polishing pad includes a polishing layer formed of a composition containing 80-99 pts.mass of thermoplastic polyurethane and 1-20 pts.mass of a polymer compound with the water absorption of 3-3,000%. COPYRIGHT: (C)2011,JPO&INPIT