ETCHING DEVICE

PROBLEM TO BE SOLVED: To provide an etching device, configured so that a substrate can be processed at relatively low cost while suppressing abnormal electrical discharge in application of a winding vacuum treatment device to a plasma processing device using RF power. SOLUTION: The etching device includes a treatment chamber provided so as to receive a part of a processing roller through which a web substrate to be processed passes in contact thereto, the processing chamber being evacuated to high vacuum; a transfer chamber for guiding and transferring the substrate to be processed; and a partitioning wall member for separating the processing chamber from the transfer chamber. The processing roller is connected to an RF power source, and a gas for plasma generation is introduced to the processing chamber to generate a plasma within the processing chamber. The transfer chamber includes a central area in which the part of the processing roller is received and a side area in which a winding-off shaft and a winding-up shaft are provided, and the central area and the side area of the transfer chamber is partitioned by an N2gas curtain. COPYRIGHT: (C)2011,JPO&INPIT