METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING CONTACT STRUCTURE

PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor device having a contact structure. SOLUTION: The method of forming a semiconductor device having a contact structure comprises steps of: a first process of forming an insulating film on a semiconductor substrate; a second process of selectively implanting impurity ions into a predetermined region of the insulating film to generate lattice defects there; and a third process of accelerating the generation of the lattice defects in the predetermined region by thermally treating the insulating film having the lattice defects. As a result, a conductive region having current paths is formed within the predetermined region. The third process includes a stage of quenching the insulating film at a temperature change rate of at least 20°C/min. COPYRIGHT: (C)2011,JPO&INPIT