PATTERN FORMING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a pattern forming method, along with a semiconductor device manufacturing method, capable of preventing a lift-off layer from being peeled from the ground without sacrificing the performance of the ground. SOLUTION: The pattern forming method includes a step of forming a cover insulating film 22 on a substrate, using a first resist pattern 104 as a mask, and forming a recess part 103 in the cover insulating film 22 so as to surround a metal film pattern forming region, a step of forming a second resist pattern 25 serving as the lift-off layer on the cover insulating film 22 so as to enter the recess part 103, using the second resist pattern 25 as a mask to form an aperture part in the cover insulating film 22 of the metal film pattern forming region, a step of forming a metal film on a surface of the substrate from on the second resist pattern 25, and a step of removing the metal film on the second resist pattern 25 together with the second resist pattern 25 to form a metal film pattern. COPYRIGHT: (C)2011,JPO&INPIT