SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor wafer capable of suppressing film peeling by an oxide film thickness decline at a wafer outer periphery by CMP in a device process while keeping the high flatness of a wafer surface. SOLUTION: The wafer surface to be used as the device active region o...

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Bibliographische Detailangaben
1. Verfasser: MASUDA SUMIHISA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor wafer capable of suppressing film peeling by an oxide film thickness decline at a wafer outer periphery by CMP in a device process while keeping the high flatness of a wafer surface. SOLUTION: The wafer surface to be used as the device active region of the semiconductor wafer is mirror-polished, the outer periphery of the mirror-polished wafer surface is polished further, and an edge roll-off region having a predetermined roll-off shape equivalent to the edge roll-off of an oxide film to be formed in the device process is formed between the device active region of the wafer surface and a chamfered part formed at a wafer edge. COPYRIGHT: (C)2011,JPO&INPIT