ORGANIC THIN-FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide an organic thin-film transistor, and a method of manufacturing the same. SOLUTION: The organic thin-film transistor includes: an insulation substrate formed with multiple barrier ribs and multiple grooves partitioned by the barrier ribs; a source and drain electrodes...

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Hauptverfasser: KWON JUNG MIN, HEO JIN HEE, KIM KYO HYEOK, YIM SANG IL, HA SANG WON, EUM KYU HAG, RYU CHANG SUP, CHUNG IL SUB
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an organic thin-film transistor, and a method of manufacturing the same. SOLUTION: The organic thin-film transistor includes: an insulation substrate formed with multiple barrier ribs and multiple grooves partitioned by the barrier ribs; a source and drain electrodes respectively formed in the grooves isolated from each other out of the multiple grooves; a gate electrode formed in the groove between the source and drain electrodes; an opening formed by etching the barrier ribs between the source electrode and the gate electrode and between the gate electrode and the drain electrode; a gate insulating film formed in the opening; and an organic semiconductor layer formed on the gate insulating film. The organic thin-film transistor allows mass production, and has an excellent electrical characteristic. COPYRIGHT: (C)2011,JPO&INPIT