APPARATUS FOR FABRICATING THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide an apparatus for fabricating a thin film transistor that can decrease the total number of process chambers. SOLUTION: The apparatus for fabricating a thin film transistor includes a first multi-chamber in which amorphous silicon is deposited on a substrate, a second...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: AN SHISHU, KIM BEONG-JU, KIN SEITETSU, YU CHEOL-HO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide an apparatus for fabricating a thin film transistor that can decrease the total number of process chambers. SOLUTION: The apparatus for fabricating a thin film transistor includes a first multi-chamber in which amorphous silicon is deposited on a substrate, a second multi-chamber in which electrodes are formed on the substrate, and a loading/unloading chamber interposed between the first multi-chamber and the second multi-chamber. The loading/unloading chamber includes a substrate holder and a power voltage supplier. COPYRIGHT: (C)2011,JPO&INPIT