SILICON SOLAR CELL CONTAINING BORON DIFFUSION LAYER AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To make thinner and to increase efficiency for reducing the manufacturing cost of a cell by solving the problem that an Al-BSF type solar cell which is most popular at present has a backside Al electrode, so that there is a limit on thinning, and the cell is about 200 μm in thi...

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1. Verfasser: JOGE TOSHIO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To make thinner and to increase efficiency for reducing the manufacturing cost of a cell by solving the problem that an Al-BSF type solar cell which is most popular at present has a backside Al electrode, so that there is a limit on thinning, and the cell is about 200 μm in thickness and has the efficiency of conversion of about 16-17%. SOLUTION: A SiO2film and a SiNxfilm are formed on both sides of a silicon solar cell which is manufactured by phosphorus diffusion and boron diffusion and has a n+-p-p+structure. A grid electrode is formed on a light receiving surface, and a thin Al electrode having a lot of small openings is formed almost all over the surface of the backside. Thereby a p++layer acting as a BSF strong against the Al electrode is formed in an n+pp++B/Al-BSF type thin high-efficiency solar cell. COPYRIGHT: (C)2011,JPO&INPIT