SPUTTERING TARGET MATERIAL

PROBLEM TO BE SOLVED: To provide a sputtering target material which achieves high speed film deposition while suppressing abnormal discharge caused by sputtering in wiring film deposition by a sputtering process. SOLUTION: The sputtering target material is made of copper alloy obtained by adding sil...

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Bibliographische Detailangaben
Hauptverfasser:	MOTOTANI KATSUTOSHI, ODAKURA MASAMI, TONOKI TATSUYA, TATSUMI NORIYUKI, ISAKA KOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a sputtering target material which achieves high speed film deposition while suppressing abnormal discharge caused by sputtering in wiring film deposition by a sputtering process. SOLUTION: The sputtering target material is made of copper alloy obtained by adding silver to oxygen-free copper of ≥4N (99.99%). The silver is added by a trace amount in such a manner that the resistivity of the film to be deposited can be equal to the resistivity of the oxygen-free copper. As the amount of the silver to be added, the range of 200 to 2,000 ppm is suitable. COPYRIGHT: (C)2011,JPO&INPIT