CONDUCTIVE BARRIER FILM FORMING MATERIAL, METHOD FOR FORMING CONDUCTIVE BARRIER FILM, AND METHOD FOR FORMING WIRING FILM
PROBLEM TO BE SOLVED: To provide a conductive barrier film forming material which can form a film even if conditions are required such as the ratio of the opening of a groove or a hole to the depth thereof (opening/depth) being 1/5 to 1/7 and even if the thickness is 10 nm or less, is excellent in p...
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| creator | HIIRO SHIGEKI HOSHINO ASAKO MACHIDA HIDEAKI SUZUKI TOSHIE |
| description | PROBLEM TO BE SOLVED: To provide a conductive barrier film forming material which can form a film even if conditions are required such as the ratio of the opening of a groove or a hole to the depth thereof (opening/depth) being 1/5 to 1/7 and even if the thickness is 10 nm or less, is excellent in preventing copper diffusion (barrier properties), has small electric resistance, and is excellent in adhesiveness with a copper film. SOLUTION: The conductive barrier film forming material is a material for forming a conductive Ta-Zr-based barrier film as a substrate film of a copper film by chemical vapor deposition. The conductive barrier film forming material includes an organic metal compound having Ta and an organic metal compound having Zr. Alternatively, the conductive barrier film forming material further includes a solvent which dissolves one or both of the Ta-organic compound and the Zr-organic compound. COPYRIGHT: (C)2011,JPO&INPIT |
| format | Patent |
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SOLUTION: The conductive barrier film forming material is a material for forming a conductive Ta-Zr-based barrier film as a substrate film of a copper film by chemical vapor deposition. The conductive barrier film forming material includes an organic metal compound having Ta and an organic metal compound having Zr. Alternatively, the conductive barrier film forming material further includes a solvent which dissolves one or both of the Ta-organic compound and the Zr-organic compound. 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SOLUTION: The conductive barrier film forming material is a material for forming a conductive Ta-Zr-based barrier film as a substrate film of a copper film by chemical vapor deposition. The conductive barrier film forming material includes an organic metal compound having Ta and an organic metal compound having Zr. Alternatively, the conductive barrier film forming material further includes a solvent which dissolves one or both of the Ta-organic compound and the Zr-organic compound. COPYRIGHT: (C)2011,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CONDUCTIVE BARRIER FILM FORMING MATERIAL, METHOD FOR FORMING CONDUCTIVE BARRIER FILM, AND METHOD FOR FORMING WIRING FILM |
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