CONDUCTIVE BARRIER FILM FORMING MATERIAL, METHOD FOR FORMING CONDUCTIVE BARRIER FILM, AND METHOD FOR FORMING WIRING FILM

PROBLEM TO BE SOLVED: To provide a conductive barrier film forming material which can form a film even if conditions are required such as the ratio of the opening of a groove or a hole to the depth thereof (opening/depth) being 1/5 to 1/7 and even if the thickness is 10 nm or less, is excellent in preventing copper diffusion (barrier properties), has small electric resistance, and is excellent in adhesiveness with a copper film. SOLUTION: The conductive barrier film forming material is a material for forming a conductive Ta-Zr-based barrier film as a substrate film of a copper film by chemical vapor deposition. The conductive barrier film forming material includes an organic metal compound having Ta and an organic metal compound having Zr. Alternatively, the conductive barrier film forming material further includes a solvent which dissolves one or both of the Ta-organic compound and the Zr-organic compound. COPYRIGHT: (C)2011,JPO&INPIT