ULTRALOW DIELECTRIC CONSTANT MATERIAL AS AN INTRA-LEVEL OR INTER-LEVEL DIELECTRIC IN SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an ultralow dielectric material having an dielectric constant of approximate 2.6 or less and a method for preparing the same. SOLUTION: A thermally stable ultralow dielectric constant film, which contains an Si atom, C atom, O atom, and H atom, has a covalent bond three dimensional network structure, and has a dielectric constant of 2.6 or less, is provided. Moreover, the dielectric constant film can have a covalent bond ring network too. The covalent bond three dimensional network structure includes an Si-O covalent bond, Si-C bond, Si-H bond, C-H covalent bond, and C-C covalent bond, and if necessary, it can include an F and N. On the film, if necessary, a Ge atom is substituted for a part of the Si atom. The film has a thickness of 1.3 micrometer or less and has a crack growth rate in water of 10-10meter/sec or less. Moreover, a back end of line (BEOL) mutual connection structure including the film as a BEOL insulator, cap, or hard mask layer is provided too. COPYRIGHT: (C)2011,JPO&INPIT