METHOD FOR DEPOSITING TRANSPARENT ELECTRODE FILM AND METHOD FOR PRODUCING SOLAR BATTERY

PROBLEM TO BE SOLVED: To provide a method for producing a transparent electrode film in which a transparent electrode film simultaneously satisfying high visible light transmittance, low resistivity, and high haze can be deposited, and to provide a method for producing a solar battery which can prod...

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Bibliographische Detailangaben
Hauptverfasser:	SASAGAWA EISHIRO, YAMAUCHI YASUHIRO, UCHIHASHI KAZUMASA, TAKANO AKIMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for producing a transparent electrode film in which a transparent electrode film simultaneously satisfying high visible light transmittance, low resistivity, and high haze can be deposited, and to provide a method for producing a solar battery which can produce a highly efficient solar battery using the transparent electrode film simultaneously satisfying high visible light transmittance, low resistivity, and high haze. SOLUTION: The method for producing the transparent electrode film comprising a transparent conductive film and an alkali barrier film includes (a) a step of supplying a fourth source gas containing SiH4and O2in a first O/Si ratio to form the alkali barrier film on a substrate, wherein the first O/Si ratio is 40 or more and 200 or less, and the thickness of the alkali barrier film is 20 nm or more and 60 nm or less. COPYRIGHT: (C)2011,JPO&INPIT