GLASS FOR SEALING SEMICONDUCTOR, SHEATH TUBE FOR SEALING SEMICONDUCTOR, AND METHOD FOR SEALING SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide glass for sealing a semiconductor, the glass having low sealing temperature and practically sufficient chemical durability, particularly acid resistance, although the glass does not substantially contain PbO. SOLUTION: The glass for sealing a semiconductor contains,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HASHIMOTO KOICHI, HIKATA HAJIME
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator HASHIMOTO KOICHI
HIKATA HAJIME
description PROBLEM TO BE SOLVED: To provide glass for sealing a semiconductor, the glass having low sealing temperature and practically sufficient chemical durability, particularly acid resistance, although the glass does not substantially contain PbO. SOLUTION: The glass for sealing a semiconductor contains, as the glass composition, two or more kinds of alkali metal oxides (Li2O, Na2O and K2O), B2O3and Bi2O3but substantially no PbO. The glass shows a temperature of 660°C or lower at viscosity of 106dPa s, and has a coefficient of thermal expansion of 85 to 105×10-7/°C at 30 to 380°C. COPYRIGHT: (C)2011,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011116578A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011116578A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011116578A3</originalsourceid><addsrcrecordid>eNrjZChx93EMDlZw8w9SCHZ19PH0cwfSvp7O_n4uoc4h_kE6CsEero4hHgohoU6u-JQ5-rko-LqGePi74Fal4Orj6uvqF8LDwJqWmFOcyguluRmU3FxDnD10Uwvy41OLCxKTU_NSS-K9AowMDIHAzNTcwtGYKEUAE-M5Rw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GLASS FOR SEALING SEMICONDUCTOR, SHEATH TUBE FOR SEALING SEMICONDUCTOR, AND METHOD FOR SEALING SEMICONDUCTOR ELEMENT</title><source>esp@cenet</source><creator>HASHIMOTO KOICHI ; HIKATA HAJIME</creator><creatorcontrib>HASHIMOTO KOICHI ; HIKATA HAJIME</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide glass for sealing a semiconductor, the glass having low sealing temperature and practically sufficient chemical durability, particularly acid resistance, although the glass does not substantially contain PbO. SOLUTION: The glass for sealing a semiconductor contains, as the glass composition, two or more kinds of alkali metal oxides (Li2O, Na2O and K2O), B2O3and Bi2O3but substantially no PbO. The glass shows a temperature of 660°C or lower at viscosity of 106dPa s, and has a coefficient of thermal expansion of 85 to 105×10-7/°C at 30 to 380°C. COPYRIGHT: (C)2011,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GLASS ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; METALLURGY ; MINERAL OR SLAG WOOL ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110616&amp;DB=EPODOC&amp;CC=JP&amp;NR=2011116578A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110616&amp;DB=EPODOC&amp;CC=JP&amp;NR=2011116578A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HASHIMOTO KOICHI</creatorcontrib><creatorcontrib>HIKATA HAJIME</creatorcontrib><title>GLASS FOR SEALING SEMICONDUCTOR, SHEATH TUBE FOR SEALING SEMICONDUCTOR, AND METHOD FOR SEALING SEMICONDUCTOR ELEMENT</title><description>PROBLEM TO BE SOLVED: To provide glass for sealing a semiconductor, the glass having low sealing temperature and practically sufficient chemical durability, particularly acid resistance, although the glass does not substantially contain PbO. SOLUTION: The glass for sealing a semiconductor contains, as the glass composition, two or more kinds of alkali metal oxides (Li2O, Na2O and K2O), B2O3and Bi2O3but substantially no PbO. The glass shows a temperature of 660°C or lower at viscosity of 106dPa s, and has a coefficient of thermal expansion of 85 to 105×10-7/°C at 30 to 380°C. COPYRIGHT: (C)2011,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZChx93EMDlZw8w9SCHZ19PH0cwfSvp7O_n4uoc4h_kE6CsEero4hHgohoU6u-JQ5-rko-LqGePi74Fal4Orj6uvqF8LDwJqWmFOcyguluRmU3FxDnD10Uwvy41OLCxKTU_NSS-K9AowMDIHAzNTcwtGYKEUAE-M5Rw</recordid><startdate>20110616</startdate><enddate>20110616</enddate><creator>HASHIMOTO KOICHI</creator><creator>HIKATA HAJIME</creator><scope>EVB</scope></search><sort><creationdate>20110616</creationdate><title>GLASS FOR SEALING SEMICONDUCTOR, SHEATH TUBE FOR SEALING SEMICONDUCTOR, AND METHOD FOR SEALING SEMICONDUCTOR ELEMENT</title><author>HASHIMOTO KOICHI ; HIKATA HAJIME</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011116578A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><toplevel>online_resources</toplevel><creatorcontrib>HASHIMOTO KOICHI</creatorcontrib><creatorcontrib>HIKATA HAJIME</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HASHIMOTO KOICHI</au><au>HIKATA HAJIME</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GLASS FOR SEALING SEMICONDUCTOR, SHEATH TUBE FOR SEALING SEMICONDUCTOR, AND METHOD FOR SEALING SEMICONDUCTOR ELEMENT</title><date>2011-06-16</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To provide glass for sealing a semiconductor, the glass having low sealing temperature and practically sufficient chemical durability, particularly acid resistance, although the glass does not substantially contain PbO. SOLUTION: The glass for sealing a semiconductor contains, as the glass composition, two or more kinds of alkali metal oxides (Li2O, Na2O and K2O), B2O3and Bi2O3but substantially no PbO. The glass shows a temperature of 660°C or lower at viscosity of 106dPa s, and has a coefficient of thermal expansion of 85 to 105×10-7/°C at 30 to 380°C. COPYRIGHT: (C)2011,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2011116578A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GLASS
JOINING GLASS TO GLASS OR OTHER MATERIALS
METALLURGY
MINERAL OR SLAG WOOL
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS
SURFACE TREATMENT OF GLASS
title GLASS FOR SEALING SEMICONDUCTOR, SHEATH TUBE FOR SEALING SEMICONDUCTOR, AND METHOD FOR SEALING SEMICONDUCTOR ELEMENT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T20%3A07%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HASHIMOTO%20KOICHI&rft.date=2011-06-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2011116578A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true