POWER SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a high-reliability power semiconductor device in which a peeling force generated at a ribbon bonding section is reduced for displacement, in a direction parallel to the connecting plane and in a direction vertical with respect to the connecting direction. SOLUTION: The power semiconductor device includes a semiconductor element 3 having a formed electrode plane 3s; a terminal 8 arranged at the area separated from the semiconductor element 3; and a ribbon bonding material 1, having a cross-section formed of a flat ribbon material for electrically connecting the semiconductor element 3 with the terminal 8 with the wider planes at both end portions 1jA, 1jB, in a longitudinal direction which is respectively joined to the electrode plane 3s and the terminal 8 of the semiconductor element 3; and the ribbon bonding material 1 further includes a deforming section 1D, having bending rigidity that is lower than that wit respect to the flattening direction of the relevant ribbon material for bending stress in the direction (=y direction) vertical to the straight line PA-PBthat connects the electrode plane 3s of the semiconductor element 3 with the bonding section of the terminal 8 and parallel to the electrode plane 3s. COPYRIGHT: (C)2011,JPO&INPIT