JOINING MATERIAL, METHOD OF MANUFACTURING JOINING MATERIAL AND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material ba...
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| creator | FUYU KEIHEI YAMAGUCHI TAKUTO IKEDA YASUSHI OKAMOTO MASAHIDE KUROKI KAZUMA KURODA HIROMITSU |
| description | PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material based on a clad material in which an Al-based alloy layer 102 is held by a Zn-base alloy layers 101 is used. The Zn-Al alloy 103 exists in the clad material, but the ratio of the Zn-Al alloy 103 is taken as ≤40% of the whole. The average crystal grain size of the Zn-alloy layer 101 is 0.85-50 μm. By performing the joining by using such a clad material, the void ratio in the joined part is suppressed to ≤10%. Further, the wettability between the semiconductor and the frame or the substrate is secured. Thus, the high reliability in the joined part is secured. COPYRIGHT: (C)2011,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011110601A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011110601A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011110601A3</originalsourceid><addsrcrecordid>eNrjZGj08vf08_RzV_B1DHEN8nT00VHwdQ3x8HdR8HcDivmFujk6h4QGgVSgq1Rw9HNRCHb19XT293MJdQ7xD1JwcQ3zdHbFbQQ21TwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjAEAgMzAwMHY2JUgQAHYM8zQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>JOINING MATERIAL, METHOD OF MANUFACTURING JOINING MATERIAL AND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>FUYU KEIHEI ; YAMAGUCHI TAKUTO ; IKEDA YASUSHI ; OKAMOTO MASAHIDE ; KUROKI KAZUMA ; KURODA HIROMITSU</creator><creatorcontrib>FUYU KEIHEI ; YAMAGUCHI TAKUTO ; IKEDA YASUSHI ; OKAMOTO MASAHIDE ; KUROKI KAZUMA ; KURODA HIROMITSU</creatorcontrib><description>PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material based on a clad material in which an Al-based alloy layer 102 is held by a Zn-base alloy layers 101 is used. The Zn-Al alloy 103 exists in the clad material, but the ratio of the Zn-Al alloy 103 is taken as ≤40% of the whole. The average crystal grain size of the Zn-alloy layer 101 is 0.85-50 μm. By performing the joining by using such a clad material, the void ratio in the joined part is suppressed to ≤10%. Further, the wettability between the semiconductor and the frame or the substrate is secured. Thus, the high reliability in the joined part is secured. COPYRIGHT: (C)2011,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110609&DB=EPODOC&CC=JP&NR=2011110601A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110609&DB=EPODOC&CC=JP&NR=2011110601A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUYU KEIHEI</creatorcontrib><creatorcontrib>YAMAGUCHI TAKUTO</creatorcontrib><creatorcontrib>IKEDA YASUSHI</creatorcontrib><creatorcontrib>OKAMOTO MASAHIDE</creatorcontrib><creatorcontrib>KUROKI KAZUMA</creatorcontrib><creatorcontrib>KURODA HIROMITSU</creatorcontrib><title>JOINING MATERIAL, METHOD OF MANUFACTURING JOINING MATERIAL AND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material based on a clad material in which an Al-based alloy layer 102 is held by a Zn-base alloy layers 101 is used. The Zn-Al alloy 103 exists in the clad material, but the ratio of the Zn-Al alloy 103 is taken as ≤40% of the whole. The average crystal grain size of the Zn-alloy layer 101 is 0.85-50 μm. By performing the joining by using such a clad material, the void ratio in the joined part is suppressed to ≤10%. Further, the wettability between the semiconductor and the frame or the substrate is secured. Thus, the high reliability in the joined part is secured. COPYRIGHT: (C)2011,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZGj08vf08_RzV_B1DHEN8nT00VHwdQ3x8HdR8HcDivmFujk6h4QGgVSgq1Rw9HNRCHb19XT293MJdQ7xD1JwcQ3zdHbFbQQ21TwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjAEAgMzAwMHY2JUgQAHYM8zQ</recordid><startdate>20110609</startdate><enddate>20110609</enddate><creator>FUYU KEIHEI</creator><creator>YAMAGUCHI TAKUTO</creator><creator>IKEDA YASUSHI</creator><creator>OKAMOTO MASAHIDE</creator><creator>KUROKI KAZUMA</creator><creator>KURODA HIROMITSU</creator><scope>EVB</scope></search><sort><creationdate>20110609</creationdate><title>JOINING MATERIAL, METHOD OF MANUFACTURING JOINING MATERIAL AND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><author>FUYU KEIHEI ; YAMAGUCHI TAKUTO ; IKEDA YASUSHI ; OKAMOTO MASAHIDE ; KUROKI KAZUMA ; KURODA HIROMITSU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011110601A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>FUYU KEIHEI</creatorcontrib><creatorcontrib>YAMAGUCHI TAKUTO</creatorcontrib><creatorcontrib>IKEDA YASUSHI</creatorcontrib><creatorcontrib>OKAMOTO MASAHIDE</creatorcontrib><creatorcontrib>KUROKI KAZUMA</creatorcontrib><creatorcontrib>KURODA HIROMITSU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUYU KEIHEI</au><au>YAMAGUCHI TAKUTO</au><au>IKEDA YASUSHI</au><au>OKAMOTO MASAHIDE</au><au>KUROKI KAZUMA</au><au>KURODA HIROMITSU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JOINING MATERIAL, METHOD OF MANUFACTURING JOINING MATERIAL AND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2011-06-09</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material based on a clad material in which an Al-based alloy layer 102 is held by a Zn-base alloy layers 101 is used. The Zn-Al alloy 103 exists in the clad material, but the ratio of the Zn-Al alloy 103 is taken as ≤40% of the whole. The average crystal grain size of the Zn-alloy layer 101 is 0.85-50 μm. By performing the joining by using such a clad material, the void ratio in the joined part is suppressed to ≤10%. Further, the wettability between the semiconductor and the frame or the substrate is secured. Thus, the high reliability in the joined part is secured. COPYRIGHT: (C)2011,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM |
| title | JOINING MATERIAL, METHOD OF MANUFACTURING JOINING MATERIAL AND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
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