JOINING MATERIAL, METHOD OF MANUFACTURING JOINING MATERIAL AND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material ba...

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Hauptverfasser:	FUYU KEIHEI, YAMAGUCHI TAKUTO, IKEDA YASUSHI, OKAMOTO MASAHIDE, KUROKI KAZUMA, KURODA HIROMITSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Zusammenfassung:	PROBLEM TO BE SOLVED: To perform the joining of a semiconductor element and a frame or a substrate by using a material in which lead is not used and to secure high reliability. SOLUTION: As the joining material between the semiconductor element and the frame or the substrate, the joining material based on a clad material in which an Al-based alloy layer 102 is held by a Zn-base alloy layers 101 is used. The Zn-Al alloy 103 exists in the clad material, but the ratio of the Zn-Al alloy 103 is taken as ≤40% of the whole. The average crystal grain size of the Zn-alloy layer 101 is 0.85-50 μm. By performing the joining by using such a clad material, the void ratio in the joined part is suppressed to ≤10%. Further, the wettability between the semiconductor and the frame or the substrate is secured. Thus, the high reliability in the joined part is secured. COPYRIGHT: (C)2011,JPO&INPIT