NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device with uniform characteristics of memory cell transistors, and to provide a method for manufacturing the same. SOLUTION: A laminate 20 is formed on a silicon substrate 11 by repeating a step of depositing a boron-doped silicon layer 72, forming a silicon nitride layer 78 on the top surface thereof, depositing a non-doped silicon layer 73, and forming a silicon nitride layer 79 on the top surface of the non-doped silicon layer. Next, through holes 30a are formed in the laminate 20, and a sacrificial material is buried in the through holes to form slits 74 extending in the X direction in the laminate 20. Then, an etching solution is supplied into the slits 74 to remove the non-doped silicon layers 73 by wet etching. Then, the etching solution is removed, and an insulating material is buried between the boron-doped silicon layers 72 and in the slits 74. Then, the sacrificial reagent is removed from inside the through holes, and a charge storing film is formed on the inner surfaces thereof to form silicon pillars inside the through holes. COPYRIGHT: (C)2011,JPO&INPIT