MATERIAL FOR DEPOSITING ELECTROCONDUCTIVE BARRIER FILM, METHOD FOR DEPOSITING ELECTROCONDUCTIVE BARRIER FILM AND METHOD FOR DEPOSITING WIRING FILM

PROBLEM TO BE SOLVED: To provide a material for depositing an electroconductive barrier film which can be deposited even when the electroconductive barrier film has 1/5-1/7 aspect ratio and ≤10 nm thickness, and which has an excellent property of preventing copper diffusion (barrier properties), sma...

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Hauptverfasser:	HIIRO SHIGEKI, HOSHINO ASAKO, MACHIDA HIDEAKI, SUZUKI TOSHIE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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