PROCESS CHAMBER WITH INNER SUPPORT

PROBLEM TO BE SOLVED: To provide a process chamber to endure high-temperature and low-pressure processes and to improve wafer temperature uniformity and gas flow performance. SOLUTION: The chamber has a vertical lenticular cross section with a wide horizontal dimension and a short vertical dimension...

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Bibliographische Detailangaben
Hauptverfasser:	JACOBS LOREN R, VAN DER JEUGD CORNELIS A, WENGERT JOHN F, VYNE ROBERT M, FOSTER DERRICK W, HALPIN MICHAEL W, HAWKINS MARK R
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR RELEVANT APPARATUS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a process chamber to endure high-temperature and low-pressure processes and to improve wafer temperature uniformity and gas flow performance. SOLUTION: The chamber has a vertical lenticular cross section with a wide horizontal dimension and a short vertical dimension between convex upper and lower walls 12, 14. A central horizontal support plate 40 is provided between two lateral side rails 16, 18. The support plate segregates the process chamber into an upper region and a lower region 66, 68, with a purge gas being introduced through a lower tube into the lower region to prevent an unwanted deposition therein. A temperature compensation ring surrounds a susceptor and is formed with a material to absorb heat with higher efficiency than a chamber wall. A gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, and the channels are merged into one at an outlet of the injector to allow mixing of adjacent longitudinal edges of separate flows well before reaching a wafer. COPYRIGHT: (C)2011,JPO&INPIT