MOS TRANSISTOR INCLUDING EXTENDED LDD SOURCE-DRAIN REGION FOR IMPROVING DURABILITY

PROBLEM TO BE SOLVED: To improve durability of an MOS transistor. SOLUTION: The MOS transistor 300 includes: a conductive gate 314 insulated from a semiconductor layer by a dielectric layer 312; first and second LDD diffusion regions 318, 319 formed by being self-aligned to respective first and second ends of the conductive gate 314; a first diffusion region 320; a second diffusion region 322; a first contact opening and metal part formed above the first diffusion region; and a second contact opening and metal part formed above the second diffusion region. The first LDD diffusion region 318 is located under a first spacer. The second LDD diffusion region 319 is located under a second spacer and extends over the first distance to the second diffusion region. The distance between the first end of the conductive gate 314 and the first contact opening is the same as the distance between the second end of the conductive gate 314 and the second contact opening. COPYRIGHT: (C)2011,JPO&INPIT