CLEANING OF NATIVE OXIDE WITH HYDROGEN-CONTAINING RADICAL
PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus that cleans a native oxide film from a metal-containing conductor without changing a (k) value of a circumferential low-k dielectric material on a substrate. SOLUTION: A substrate cleaning apparatus has a remote source 35 to remotely ex...
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| creator | MOSELY RODERICK C KAO CHIEN-TEH KAWAGUCHI MARK N LAI CHIUKUN STEVEN WANG WEI W PAPANU JAMES S AL HUA WOOD BINGXI SUN |
| description | PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus that cleans a native oxide film from a metal-containing conductor without changing a (k) value of a circumferential low-k dielectric material on a substrate. SOLUTION: A substrate cleaning apparatus has a remote source 35 to remotely excite a hydrogen-containing gas to form an excited gas having a first ratio of ionic hydrogen-containing chemical species to radical hydrogen-containing chemical species. The apparatus has a support 110 for the substrate 10, an ion filter 50 to filter the remotely excited gas to form a filtered excited gas having a second ratio of ionic hydrogen-containing chemical species to radical hydrogen-containing chemical species, the second ratio being different than the first ratio, and a gas distributor 70 to introduce the filtered excited gas into a process zone 108 in a chamber 106a. COPYRIGHT: (C)2011,JPO&INPIT |
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SOLUTION: A substrate cleaning apparatus has a remote source 35 to remotely excite a hydrogen-containing gas to form an excited gas having a first ratio of ionic hydrogen-containing chemical species to radical hydrogen-containing chemical species. The apparatus has a support 110 for the substrate 10, an ion filter 50 to filter the remotely excited gas to form a filtered excited gas having a second ratio of ionic hydrogen-containing chemical species to radical hydrogen-containing chemical species, the second ratio being different than the first ratio, and a gas distributor 70 to introduce the filtered excited gas into a process zone 108 in a chamber 106a. COPYRIGHT: (C)2011,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CLEANING OF NATIVE OXIDE WITH HYDROGEN-CONTAINING RADICAL |
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