CLEANING OF NATIVE OXIDE WITH HYDROGEN-CONTAINING RADICAL

PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus that cleans a native oxide film from a metal-containing conductor without changing a (k) value of a circumferential low-k dielectric material on a substrate. SOLUTION: A substrate cleaning apparatus has a remote source 35 to remotely ex...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MOSELY RODERICK C, KAO CHIEN-TEH, KAWAGUCHI MARK N, LAI CHIUKUN STEVEN, WANG WEI W, PAPANU JAMES S, AL HUA, WOOD BINGXI SUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus that cleans a native oxide film from a metal-containing conductor without changing a (k) value of a circumferential low-k dielectric material on a substrate. SOLUTION: A substrate cleaning apparatus has a remote source 35 to remotely excite a hydrogen-containing gas to form an excited gas having a first ratio of ionic hydrogen-containing chemical species to radical hydrogen-containing chemical species. The apparatus has a support 110 for the substrate 10, an ion filter 50 to filter the remotely excited gas to form a filtered excited gas having a second ratio of ionic hydrogen-containing chemical species to radical hydrogen-containing chemical species, the second ratio being different than the first ratio, and a gas distributor 70 to introduce the filtered excited gas into a process zone 108 in a chamber 106a. COPYRIGHT: (C)2011,JPO&INPIT