SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To prevent transistor characteristics from being fluctuated in a transistor structure where a metal for controlling threshold voltage which is variable in an n-type MIS transistor and a p-type MIS transistor is added to a high dielectric constant gate insulating film. SOLUTION:...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	OSUGA TSUTOMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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