SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To prevent transistor characteristics from being fluctuated in a transistor structure where a metal for controlling threshold voltage which is variable in an n-type MIS transistor and a p-type MIS transistor is added to a high dielectric constant gate insulating film. SOLUTION: A high dielectric constant film 6 as a gate insulating film is formed extended from a first upper portion 1a onto a second active region 1b through an element isolation region 2. A first recessed portion 2a is formed on an upper portion of the element isolation region 2 of a portion adjacent to a first active region 1a. A second recessed portion 2b is formed on an upper portion of the element isolation region 2 of the portion adjacent to the second active region 1b. A second recessed portion 2b is formed shallower than the first recessed portion 2a. COPYRIGHT: (C)2011,JPO&INPIT