SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To further reduce an area of an SRAM memory cell. SOLUTION: A semiconductor device includes: a first active region formed within a memory cell region on a substrate; a second active region separated from the first active region by an element isolation, the second active region...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IGARASHI MOTOSHIGE, TSUBOI NOBUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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