METHOD OF FORMING MICROCRYSTAL SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a technology for forming a crystalline semiconductor film (for example, microcrystal semiconductor film) which is dense with no cavity among crystal particles. SOLUTION: The pressure of reactive gas in a reactive chamber of a plasma CVD device is set to be 450-13,332...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ICHIJO MITSUHIRO, TAJIMA RYOTA, OTSUKI TAKASHI, ENDO TOSHIYA, TOKUMARU AKIRA, CHOKAI SATOSHI, YOKOI TOMOKAZU, YAMAZAKI SHUNPEI, KURISHIRO KAZUKI, TANAKA TETSUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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