METHOD OF FORMING MICROCRYSTAL SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a technology for forming a crystalline semiconductor film (for example, microcrystal semiconductor film) which is dense with no cavity among crystal particles. SOLUTION: The pressure of reactive gas in a reactive chamber of a plasma CVD device is set to be 450-13,332 Pa. An interval between a first electrode and a second electrode of the plasma CVD device is set to be 1-20 mm, more preferably, 4-16 mm. The first electrode is supplied with a high frequency power of 60 MHz or lower to form a plasma region between the first electrode and the second electrode. In the gaseous phase containing the plasma region, a deposition precursor comprising semiconductor having crystallinity is formed. By depositing the deposition precursor, a crystal nucleus of 5-15 nm is formed. A microcrystal semiconductor film is formed by growing a crystal from the crystal nucleus. COPYRIGHT: (C)2011,JPO&INPIT