METHOD OF FORMING MICROCRYSTAL SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a technology for forming a crystalline semiconductor film (for example, microcrystal semiconductor film) which is dense with no cavity among crystal particles. SOLUTION: The pressure of reactive gas in a reactive chamber of a plasma CVD device is set to be 450-13,332...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ICHIJO MITSUHIRO TAJIMA RYOTA OTSUKI TAKASHI ENDO TOSHIYA TOKUMARU AKIRA CHOKAI SATOSHI YOKOI TOMOKAZU YAMAZAKI SHUNPEI KURISHIRO KAZUKI TANAKA TETSUHIRO |
| description | PROBLEM TO BE SOLVED: To provide a technology for forming a crystalline semiconductor film (for example, microcrystal semiconductor film) which is dense with no cavity among crystal particles. SOLUTION: The pressure of reactive gas in a reactive chamber of a plasma CVD device is set to be 450-13,332 Pa. An interval between a first electrode and a second electrode of the plasma CVD device is set to be 1-20 mm, more preferably, 4-16 mm. The first electrode is supplied with a high frequency power of 60 MHz or lower to form a plasma region between the first electrode and the second electrode. In the gaseous phase containing the plasma region, a deposition precursor comprising semiconductor having crystallinity is formed. By depositing the deposition precursor, a crystal nucleus of 5-15 nm is formed. A microcrystal semiconductor film is formed by growing a crystal from the crystal nucleus. COPYRIGHT: (C)2011,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2011071498A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2011071498A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2011071498A3</originalsourceid><addsrcrecordid>eNrjZEj2dQ3x8HdR8HdTcPMP8vX0c1fw9XQO8ncOigwOcfRRCHYFcv39XEKdQ_yDFNw8fXx1FBz9XBQQ2nwd_ULdHJ1DQoNAmlHVu7iGeTq78jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDQwNzQxNLC0djohQBAJq7NOM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF FORMING MICROCRYSTAL SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>ICHIJO MITSUHIRO ; TAJIMA RYOTA ; OTSUKI TAKASHI ; ENDO TOSHIYA ; TOKUMARU AKIRA ; CHOKAI SATOSHI ; YOKOI TOMOKAZU ; YAMAZAKI SHUNPEI ; KURISHIRO KAZUKI ; TANAKA TETSUHIRO</creator><creatorcontrib>ICHIJO MITSUHIRO ; TAJIMA RYOTA ; OTSUKI TAKASHI ; ENDO TOSHIYA ; TOKUMARU AKIRA ; CHOKAI SATOSHI ; YOKOI TOMOKAZU ; YAMAZAKI SHUNPEI ; KURISHIRO KAZUKI ; TANAKA TETSUHIRO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a technology for forming a crystalline semiconductor film (for example, microcrystal semiconductor film) which is dense with no cavity among crystal particles. SOLUTION: The pressure of reactive gas in a reactive chamber of a plasma CVD device is set to be 450-13,332 Pa. An interval between a first electrode and a second electrode of the plasma CVD device is set to be 1-20 mm, more preferably, 4-16 mm. The first electrode is supplied with a high frequency power of 60 MHz or lower to form a plasma region between the first electrode and the second electrode. In the gaseous phase containing the plasma region, a deposition precursor comprising semiconductor having crystallinity is formed. By depositing the deposition precursor, a crystal nucleus of 5-15 nm is formed. A microcrystal semiconductor film is formed by growing a crystal from the crystal nucleus. COPYRIGHT: (C)2011,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110407&DB=EPODOC&CC=JP&NR=2011071498A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110407&DB=EPODOC&CC=JP&NR=2011071498A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ICHIJO MITSUHIRO</creatorcontrib><creatorcontrib>TAJIMA RYOTA</creatorcontrib><creatorcontrib>OTSUKI TAKASHI</creatorcontrib><creatorcontrib>ENDO TOSHIYA</creatorcontrib><creatorcontrib>TOKUMARU AKIRA</creatorcontrib><creatorcontrib>CHOKAI SATOSHI</creatorcontrib><creatorcontrib>YOKOI TOMOKAZU</creatorcontrib><creatorcontrib>YAMAZAKI SHUNPEI</creatorcontrib><creatorcontrib>KURISHIRO KAZUKI</creatorcontrib><creatorcontrib>TANAKA TETSUHIRO</creatorcontrib><title>METHOD OF FORMING MICROCRYSTAL SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a technology for forming a crystalline semiconductor film (for example, microcrystal semiconductor film) which is dense with no cavity among crystal particles. SOLUTION: The pressure of reactive gas in a reactive chamber of a plasma CVD device is set to be 450-13,332 Pa. An interval between a first electrode and a second electrode of the plasma CVD device is set to be 1-20 mm, more preferably, 4-16 mm. The first electrode is supplied with a high frequency power of 60 MHz or lower to form a plasma region between the first electrode and the second electrode. In the gaseous phase containing the plasma region, a deposition precursor comprising semiconductor having crystallinity is formed. By depositing the deposition precursor, a crystal nucleus of 5-15 nm is formed. A microcrystal semiconductor film is formed by growing a crystal from the crystal nucleus. COPYRIGHT: (C)2011,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEj2dQ3x8HdR8HdTcPMP8vX0c1fw9XQO8ncOigwOcfRRCHYFcv39XEKdQ_yDFNw8fXx1FBz9XBQQ2nwd_ULdHJ1DQoNAmlHVu7iGeTq78jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDQwNzQxNLC0djohQBAJq7NOM</recordid><startdate>20110407</startdate><enddate>20110407</enddate><creator>ICHIJO MITSUHIRO</creator><creator>TAJIMA RYOTA</creator><creator>OTSUKI TAKASHI</creator><creator>ENDO TOSHIYA</creator><creator>TOKUMARU AKIRA</creator><creator>CHOKAI SATOSHI</creator><creator>YOKOI TOMOKAZU</creator><creator>YAMAZAKI SHUNPEI</creator><creator>KURISHIRO KAZUKI</creator><creator>TANAKA TETSUHIRO</creator><scope>EVB</scope></search><sort><creationdate>20110407</creationdate><title>METHOD OF FORMING MICROCRYSTAL SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><author>ICHIJO MITSUHIRO ; TAJIMA RYOTA ; OTSUKI TAKASHI ; ENDO TOSHIYA ; TOKUMARU AKIRA ; CHOKAI SATOSHI ; YOKOI TOMOKAZU ; YAMAZAKI SHUNPEI ; KURISHIRO KAZUKI ; TANAKA TETSUHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2011071498A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ICHIJO MITSUHIRO</creatorcontrib><creatorcontrib>TAJIMA RYOTA</creatorcontrib><creatorcontrib>OTSUKI TAKASHI</creatorcontrib><creatorcontrib>ENDO TOSHIYA</creatorcontrib><creatorcontrib>TOKUMARU AKIRA</creatorcontrib><creatorcontrib>CHOKAI SATOSHI</creatorcontrib><creatorcontrib>YOKOI TOMOKAZU</creatorcontrib><creatorcontrib>YAMAZAKI SHUNPEI</creatorcontrib><creatorcontrib>KURISHIRO KAZUKI</creatorcontrib><creatorcontrib>TANAKA TETSUHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ICHIJO MITSUHIRO</au><au>TAJIMA RYOTA</au><au>OTSUKI TAKASHI</au><au>ENDO TOSHIYA</au><au>TOKUMARU AKIRA</au><au>CHOKAI SATOSHI</au><au>YOKOI TOMOKAZU</au><au>YAMAZAKI SHUNPEI</au><au>KURISHIRO KAZUKI</au><au>TANAKA TETSUHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FORMING MICROCRYSTAL SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2011-04-07</date><risdate>2011</risdate><abstract>PROBLEM TO BE SOLVED: To provide a technology for forming a crystalline semiconductor film (for example, microcrystal semiconductor film) which is dense with no cavity among crystal particles. SOLUTION: The pressure of reactive gas in a reactive chamber of a plasma CVD device is set to be 450-13,332 Pa. An interval between a first electrode and a second electrode of the plasma CVD device is set to be 1-20 mm, more preferably, 4-16 mm. The first electrode is supplied with a high frequency power of 60 MHz or lower to form a plasma region between the first electrode and the second electrode. In the gaseous phase containing the plasma region, a deposition precursor comprising semiconductor having crystallinity is formed. By depositing the deposition precursor, a crystal nucleus of 5-15 nm is formed. A microcrystal semiconductor film is formed by growing a crystal from the crystal nucleus. COPYRIGHT: (C)2011,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2011071498A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD OF FORMING MICROCRYSTAL SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T15%3A16%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ICHIJO%20MITSUHIRO&rft.date=2011-04-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2011071498A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |