SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To solve the problem that a termination structure provided with a JTE layer greatly deteriorates in breakdown voltage since a level and a defect present in an interface between a semiconductor layer and an insulating film or a fine amount of an external impurity in the insulating film or entering from outside up to the semiconductor interface through the insulating film becomes a generation source for a leakage current and a high current due to breakdown. SOLUTION: The semiconductor device includes an n--type semiconductor layer 2 formed on an n+-type semiconductor substrate 1, a first electrode 3 formed thereupon and functioning as a Schottky electrode, a GR layer 4 composed of a first p-type semiconductor layer formed at an end 3E of the first electrode 3 and a surface of the n--type semiconductor layer 2 at a periphery thereof, a JTE layer 5 composed of a second p-type semiconductor layer formed on a bottom part 9B and a side face 9S of a groove 9 arranged in a ring shape at a circumference of the GR layer 4 apart from the GR layer 4 on a surface 2S of the n--type semiconductor layer 2, and increasing in impurity concentration with depth up to a prescribed depth, and an insulating film 7 provided so as to cover the GR layer 4 and JTE layer 5. COPYRIGHT: (C)2011,JPO&INPIT