SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device in which electric field concentration caused between a gate and a drain is relaxed. SOLUTION: The semiconductor device includes a first gate electrode formed on a semiconductor substrate via a gate insulating film, a second gate electrode formed on the semiconductor substrate via the gate insulating film and disposed on a side face of the first gate electrode via an insulating spacer, a source region and a drain region formed on the semiconductor substrate across the first and second gate electrodes, and an electric field relaxation region formed across a region being a part of the semiconductor substrate below the first gate electrode and formed overlapping the second gate electrode, and the source region and drain region. COPYRIGHT: (C)2011,JPO&INPIT