LIGHT-EMITTING DIODE ELEMENT AND METHOD FOR MANUFACTURING THE LIGHT-EMITTING DIODE ELEMENT

PROBLEM TO BE SOLVED: To provide a light-emitting diode element which has high light extracting efficiency by the use of a conventional vacuum vapor deposition device, and to provide a method for manufacturing the element. SOLUTION: A transparent electrode film 16 on a luminous layer 19 is cooled down to a low temperature (100°C or less, in the case of an ITO film), while being deposited at a low film forming rate (0.26 nm/s or less, in the case of the ITO film), whereby as a film can be formed when arithmetical average roughness of the surface is equal to or less than 2.7 nm, it is possible to attain the light-emitting diode element 10e, which has high reflectance at an interface between the transparent electrode film 16 and a reflection electrode film 17, and the high light-extracting efficiency. Furthermore, fast and high-temperature annealing (400 to less than 850°C, in the case of the ITO film) processing is performed after the transparent electrode film 16 is formed, thereby attaining the light-emitting diode element 10e preferable in practical use in which resistivity of the transparent electrode film 16 is equal to or less than 1.0×10-3Ω cm. COPYRIGHT: (C)2011,JPO&INPIT