SEMICONDUCTOR APPARATUS

PROBLEM TO BE SOLVED: To solve a problem that, since the thickness of a connector is required to be smaller than or equal to twice present solder (about 100 μm) for making the thermal resistance of the connector at least the same level as present high-lead solder when connection using the conventional Zn/Al/Zn clad material is carried out, and since the thickness of an Al layer is required to be thickened as much as possible for sufficiently exercising a stress buffer capacity of the Al layer, the thickness of a Zn layer should be thinned, and thereby the mass production cost is increased remarkably since it is necessary to be pressurized by a load more than about 2 g/mm2at the time of connection for obtaining a sufficient connection property when the Zn layer is thin. SOLUTION: A semiconductor apparatus has a semiconductor element, a frame, and a connector that connects the semiconductor element and the frame. The connector contains Zn-Al alloy. An interface between the connector and the semiconductor element and an interface between the connector and the frame have an area of an Al oxide film which is equal to or larger than 0% and equal to or smaller than 5% with respect to an area of the whole interface. COPYRIGHT: (C)2011,JPO&INPIT