METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SUBSTRATE TREATMENT APPARATUS

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device, which is capable of increasing operation rate of an apparatus and is excellent in mass productivity, and a substrate treatment apparatus. SOLUTION: The method for producing a semiconductor device comprises: a step of carrying a substrate into a treatment chamber; a step of feeding a nickel-containing starting material into the treatment chamber so as to form a nickel-containing film on the substrate; a step of carrying the treated substrate out from the treatment chamber; and, in the treatment chamber containing no substrate, a step of removing a nickel-containing deposit attached to the interior of the treatment chamber by feeding a halogen gas to the treatment chamber and reacting the same with the nickel-containing deposit attached to the interior of the treatment chamber so as to produce a nickel halide, subsequently feeding a gas containing a cyclopenta group and reacting the same with the nickel halide so as to produce a nickel compound, and heating and vaporizing the nickel compound and discharging the same from the treatment chamber. COPYRIGHT: (C)2011,JPO&INPIT